50T60 (Malaysia Original) 600V 80A N-Channel IGBT TO-247

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The K50T60 from Infineon’s TRENCHSTOP™ Series is a high-efficiency, low-loss IGBT (Insulated Gate Bipolar Transistor) designed for demanding power switching applications. Utilizing advanced TRENCHSTOP™ and Fieldstop technology, it delivers superior performance in energy conversion systems including frequency converters and uninterruptible power supplies (UPS). ...See more
SKU BTS-00005149
Tags: IGBTs
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The K50T60 from Infineon’s TRENCHSTOP™ Series is a high-efficiency, low-loss IGBT (Insulated Gate Bipolar Transistor) designed for demanding power switching applications. Utilizing advanced TRENCHSTOP™ and Fieldstop technology, it delivers superior performance in energy conversion systems including frequency converters and uninterruptible power supplies (UPS).

This 600V, 50A IGBT features a very low V<sub>CE(sat)</sub> of 1.5V (typ.), ensuring reduced conduction losses and improved thermal performance. Paired with a soft, fast-recovery Emitter Controlled High-Efficiency (HE) diode, it supports high-speed switching with low EMI and minimal switching losses. With a maximum junction temperature of 175°C and a short-circuit withstand time of 5µs, the K50T60 is ideal for high-reliability industrial applications.

 

Features:

  • Low VCE(sat) of 1.5V (typ.) for reduced conduction losses

  • High-speed switching with low gate charge and minimal EMI

  • Short-circuit rated with 5µs withstand time

  • High junction temperature operation up to 175°C

  • Integrated soft, fast-recovery Emitter Controlled HE diode

  • Positive temperature coefficient simplifies parallel operation

  • JEDEC-qualified and RoHS compliant

  • Pb-free lead plating for environmentally friendly manufacturing

  • Ideal for use in:

    • Frequency converters

    • Uninterruptible power supplies (UPS)

    • Industrial inverters

 

Applications:

  • Industrial Motor Drives

  • Power Inverters

  • UPS Systems

  • Welding Equipment

  • Renewable Energy Systems

 

 

Specifications:

Parameter Value Unit
Collector-Emitter Voltage (V<sub>CE</sub>) 600 V
DC Collector Current (I<sub>C</sub>) @25°C 80 A
DC Collector Current (I<sub>C</sub>) @100°C 50 A
V<sub>CE(sat)</sub> @T<sub>j</sub>=25°C 1.5 V (typical)
Pulsed Collector Current 150 A
Short-Circuit Withstand Time 5 µs
Gate-Emitter Voltage (V<sub>GE</sub>) ±20 V
Power Dissipation @25°C 333 W
Operating Junction Temperature -40 to +175 °C
Storage Temperature -55 to +150 °C
Soldering Temperature (10s, 1.6mm) 260 °C

 

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    The latest price of 50T60 (Malaysia Original) 600V 80A N-Channel IGBT TO-247 in Bangladesh is BDT 390.00 . You can buy the 50T60 (Malaysia Original) 600V 80A N-Channel IGBT TO-247 at the best price on BDTronics.com or contact us via phone.

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