IRFP4668PBF Infineon HEXFET N-Channel Power MOSFET designed for high current and high efficiency switching applications including DC-DC converters, motor drives, battery systems, inverters, and industrial power electronics. With a 200V drain-source voltage rating and extremely high 130A current capability, this MOSFET is ideal for heavy duty power systems requiring low conduction loss and high reliability.

This MOSFET features ultra low RDS(on) of approximately 10mΩ which significantly reduces power loss and heat generation in high current circuits. The HEXFET technology from Infineon ensures fast switching performance, optimized gate charge, and improved efficiency in both low and high frequency applications.

The TO-247 package provides excellent thermal performance and allows efficient heat dissipation using heatsinks, making it suitable for high power designs such as electric vehicles, high current power supplies, welding machines, and solar energy systems.

IRFP4668PBF is widely used by engineers, power electronics designers, and repair professionals for high performance switching applications. BDTronics supplies original Infineon IRFP4668PBF MOSFET in Bangladesh for industrial, commercial, and DIY electronics projects.

BDTronics provides high quality power MOSFETs for inverter circuits, motor control systems, battery management systems, and high current switching applications across Bangladesh.

Features:

• Infineon HEXFET N-Channel Power MOSFET

• High Current Capability up to 130A

• 200V Drain-Source Voltage Rating

• Ultra Low RDS(on) ~10mΩ for Reduced Power Loss

• High Power Dissipation up to 520W

• Fast Switching Performance for Efficient Operation

• Optimized Gate Charge for Better Efficiency

• Enhancement Mode MOSFET

• TO-247 Package for Excellent Thermal Management

• Suitable for High Current and High Power Applications

• Wide Operating Temperature Range up to 175°C

• Reliable Performance in Industrial Systems

Applications:

• High Current DC-DC Converters

• Motor Driver and Motor Control Systems

• Solar Inverter Systems

• Battery Management Systems (BMS)

• Electric Vehicle Power Systems

• Welding Machine Circuits

• High Power SMPS Systems

• UPS and Power Backup Systems

• Industrial Power Electronics

• High Current Switching Applications

How to Use:

• Identify Gate, Drain, and Source pins before installation

• Use a proper gate driver to fully drive the MOSFET

• Mount on a heatsink for high current applications

• Ensure proper PCB layout for high current paths

• Use low resistance connections to minimize losses

• Apply appropriate gate resistor for stable switching

• Use snubber or protection circuits in inductive loads

• Verify voltage and current ratings before use

Specifications:

• Model: IRFP4668PBF

• Brand: Infineon

• Type: N-Channel Power MOSFET

• Technology: HEXFET

• Drain-Source Voltage (VDS): 200V

• Continuous Drain Current (ID): 130A

• RDS(on): ~10mΩ

• Gate-Source Voltage (VGS max): ±30V

• Gate Charge (Qg): ~161nC

• Power Dissipation (Pd): 520W

• Forward Voltage (Body Diode): 1.3V

• Operating Temperature: -55°C to +175°C

• Package: TO-247

• Mounting Type: Through Hole

• Pin Count: 3

Package Includes:

• 1 × IRFP4668PBF Infineon HEXFET Power MOSFET

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