IRFP4310ZPbF N Channel HEXFET Power MOSFET
IRFP4310ZPbF is a high efficiency N channel power mosfet which as extremely low RDS(ON) resistance (approximately 5.6-7.0 milli ohm). It's widely used in high efficiency synchronous rectification in SMPS, uninterruptible power supplied, high speed power switching, hard switched and high frequency circuits. It has improved gate, avalanche and dynamic dV/dt ruggedness, fully characterized capacitance and avalanche SOA. enhanced body diode dV/dt and dI/dt capability which comes with a lead-free package.
In stock
SKU PRD-00000788
BDTÂ 170.00
Categories: FETs
Delivery Info
Inside Dhaka: 1-2 days
Express (Dhaka): 24 hours
Order before 12.00PM
Order before 12.00PM
Outside Dhaka: 2-3 days
Cash on delivery all over BD
Quality
100% authentic product
Quality product guaranteed
Service
7 days easy return
Safe & secure payment
Customer Support
Write Your Own Review
Only registered users can write reviews. Please Sign in or create an account
Product Details / IRFP4310ZPbF N Channel HEXFET Power MOSFET
Technical Specifications:
- Type Designator: IRFB4310
- Type of Transistor: MOSFET
- Type of Control Channel: N -Channel
- Maximum Power Dissipation (Pd): 330 W
- Maximum Drain-Source Voltage |Vds|: 100 V
- Maximum Gate-Source Voltage |Vgs|: 20 V
- Maximum Drain Current |Id|: 140 A
- Total Gate Charge (Qg): 170 nC
- Maximum Drain-Source On-State Resistance (Rds): 0.007 Ohm