IRFB4110PbF N Channel HEXFET Power MOSFET
IRFP4310ZPbF is a high efficiency N channel power mosfet which as extremely low RDS(ON) resistance (approximately 5.6-7.0 milli ohm). It's widely used in high efficiency synchronous rectification in SMPS, uninterruptible power supplied, high speed power switching, hard switched and high frequency circuits. It has improved gate, avalanche and dynamic dV/dt ruggedness, fully characterized capacitance and avalanche SOA. enhanced body diode dV/dt and dI/dt capability which comes with a lead-free package.
In stock
SKU PRD-00000789
BDTÂ 135.00
Category: FETs
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Product Details / IRFB4110PbF N Channel HEXFET Power MOSFET
Technical Specifications:
- Type Designator: IRFB4310
- Type of Transistor: MOSFET
- Type of Control Channel: N -Channel
- Maximum Power Dissipation (Pd): 330 W
- Maximum Drain-Source Voltage |Vds|: 100 V
- Maximum Gate-Source Voltage |Vgs|: 20 V
- Maximum Drain Current |Id|: 140 A
- Total Gate Charge (Qg): 170 nC
- Maximum Drain-Source On-State Resistance (Rds): 0.007 Ohm