FDP20N50F-VB N-Channel Super Junction MOSFET designed for high voltage and high efficiency switching applications including SMPS power supplies, solar inverters, UPS systems, battery chargers, industrial power control, and telecom power systems. This MOSFET offers 650V drain-source voltage capability with low RDS(on) and low gate charge, ensuring efficient switching performance and reduced power losses.

Built using advanced Super Junction technology, FDP20N50F-VB provides low switching losses, reduced reverse recovery charge, and improved efficiency in high frequency applications. It is ideal for power electronics circuits requiring fast switching, high reliability, and thermal stability.

The TO-220AB package allows easy mounting on heatsinks for better heat dissipation in high power applications. This MOSFET is widely used in SMPS circuits, ATX power supplies, solar inverter boards, welding machines, and industrial control systems.

BDTronics supplies high quality FDP20N50F-VB MOSFET in Bangladesh suitable for electronics engineers, repair technicians, inverter manufacturers, and power electronics developers. This component is ideal for replacing damaged MOSFETs in power supply circuits and building efficient high voltage switching systems.

Features:

• 650V High Voltage N-Channel Power MOSFET

• Super Junction Technology for High Efficiency

• Low RDS(on) for Reduced Conduction Loss

• Ultra Low Gate Charge for Fast Switching

• Low Input Capacitance for Improved Performance

• Reduced Reverse Recovery Charge (Qrr)

• Low Switching Losses for High Frequency Applications

• Avalanche Energy Rated for Rugged Operation

• TO-220AB Package for Easy Heatsink Mounting

• Suitable for High Power Switching Circuits

• High Reliability for Industrial Applications

• Optimized Figure of Merit (RDS(on) × Qg)

Applications:

• SMPS Power Supply Circuits

• ATX Power Supplies

• Solar Inverter Systems

• UPS Power Systems

• Battery Charger Circuits

• Welding Machine Power Circuits

• Industrial Power Control Systems

• Telecom Power Supply Units

• LED Lighting Drivers

• Renewable Energy Systems

• High Voltage DC Switching Circuits

How to Use:

• Identify Gate, Drain, and Source pins before installation

• Use proper gate driver circuit for efficient switching

• Mount on heatsink for high power applications

• Ensure proper isolation and PCB layout for high voltage

• Use snubber circuits in SMPS to protect MOSFET

• Verify correct orientation before soldering

• Use appropriate gate resistor for stable operation

• Suitable for high frequency switching designs

Specifications:

• Model: FDP20N50F-VB

• Type: N-Channel Power MOSFET

• Technology: Super Junction

• Drain-Source Voltage (VDS): 650V

• Gate-Source Voltage (VGS): ±20V (Typical)

• RDS(on): ~0.19Ω (at VGS = 10V)

• Gate Charge (Qg): Low (~106nC max)

• Configuration: Single

• Package: TO-220AB

• Switching Type: High Voltage Fast Switching MOSFET

Package Includes:

• 1 × FDP20N50F-VB 650V N-Channel Power MOSFET

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