BSS138 J1 N-Channel Logic Level Enhancement Mode Field Effect Transistor
BSS138 (J1) is a N-channel logic level enhancement mode field effect transistor which has been designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications. The main features of this FET are Low On-Resistance, Low Gate Threshold Voltage, Low Input Capacitance, Fast Switching Speed, Low Input/Output Leakage. It is widely used in logic level converter and switching applications.
In stock
SKU PRD-00001199
...
BDT 7.00
BDT 8.50
Category: Transistor
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Product Details / BSS138 J1 N-Channel Logic Level Enhancement Mode Field Effect Transistor
Technical Specifications:
VDSS Drain−Source Voltage: 50 V
VGSS Gate−Source Voltage: ±20
ID Drain Current – Continuous: 0.22 A
Drain Current – Pulsed: 0.88
PD Maximum Power Dissipation: 0.36 W
Derate Above 25°C: 2.8 mW/°C
TJ , TSTG Operating and Storage Junction Temperature Range −55 to +150 °C
TL Maximum Lead Temperature for Soldering Purposes, 1/16” from Case for 10 s: 300°C