Si2307 Si2307DS A7SHB P-Channel 30V SMD MOSFET
The Si2307 is a P-channel enhancement mode field effect transistor. It is super high dense cell design for low R DS(ON), rugged and reliable, sSimple drive requirement. It comes as SOT-23 package with maximu drain to source voltage of 30V. It can deliver upto 3A of current while providing RDS(ON) 140mΩ at 4.5V VGS.
In stock
SKU PRD-00001193
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BDT 15.00
BDT 16.00
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Product Details / Si2307 Si2307DS A7SHB P-Channel 30V SMD MOSFET
Technical Specifications:
- Vds - Drain-Source Breakdown Voltage: -30 V
- Id - Continuous Drain Current: -5.3A
- Rds On - Drain-Source Resistance: 64.5 mOhms
- Vgs - Gate-Source Voltage: -20 V, +20 V
- Vgs th - Gate-Source Threshold Voltage: -1 V
- Qg - Gate Charge: 9.35 nC
- Minimum Operating Temperature: - 55 C
- Maximum Operating Temperature: + 150 C
- Pd - Power Dissipation: 1W
- Channel Mode: Enhancement
- Fall Time: 3.87 ns
- Rise Time: 2.33 ns
- Typical Turn-Off Delay Time: 22.53 ns
- Typical Turn-On Delay Time: 10.8 ns
- Weight: 8 mg