Si2307 Si2307DS A7SHB P-Channel 30V SMD MOSFET

The Si2307 is a P-channel enhancement mode field effect transistor. It is super high dense cell design for low R DS(ON), rugged and reliable, sSimple drive requirement. It comes as SOT-23 package with maximu drain to source voltage of 30V. It can deliver upto 3A of current while providing RDS(ON) 140mΩ at 4.5V VGS.

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SKU PRD-00001193
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Product Details

Technical Specifications:

  • Vds - Drain-Source Breakdown Voltage: -30 V
  • Id - Continuous Drain Current: -5.3A
  • Rds On - Drain-Source Resistance: 64.5 mOhms
  • Vgs - Gate-Source Voltage: -20 V, +20 V
  • Vgs th - Gate-Source Threshold Voltage: -1 V
  • Qg - Gate Charge: 9.35 nC
  • Minimum Operating Temperature: - 55 C
  • Maximum Operating Temperature: + 150 C
  • Pd - Power Dissipation: 1W
  • Channel Mode: Enhancement
  • Fall Time: 3.87 ns
  • Rise Time: 2.33 ns
  • Typical Turn-Off Delay Time: 22.53 ns
  • Typical Turn-On Delay Time: 10.8 ns
  • Weight: 8 mg
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